１３１０ｎｍの半導体レーザダイオードは高品質な製品である。１３１０ｎｍの半導体レーザダイオードは光通信、空間通信と他の領域に応用されておる。１３１０ｎｍ半導体レーザダイオードはＴＯ１８のパッケージと平面プリズムを採用します。
特徴
* 波長1310nm
* 輸出出力 5mW
* 高品質
* 高效率
応用分野
* 光ファイバーは通信
* 自由空間の光ファイバー通信
1310nm semiconductor laser with high stability and long-lifetime. These products are widely used in optical communications, space communications and other fields. 1310nm laser diode used TO18 compact package with Peace mirror ball lens cap closed in two forms.
Features
* Wavelength 1310nm
* Output Power 5mW
* High Reliability
* High Efficiency
Applications
* Optical Fiber Communication
* Free-space Optical Communication
Specifications（25℃）
Type LDS-1310-0056/LDS-1310-0058 Unit
Optical Specification
Output Power Po 5 mW
Center Wavelength λc 1310±20 nm
Spectral Width Δλ ≤3.0 nm
Emitting Area 4×1 µm
Wavelength Temperature Coefficient 0.35 nm/℃
Beam Divergence θ⊥×θ∥ 40×20 deg
Polarization TE
Electrical Specification
Slope Efficiency Es ≥0.2 W/A
Threshold Current Ith ≤15 mA
Operating Current Io ≤40 mA
Operating Voltage Vf ≤ 1.5 V
Series Resistance Rd ≤ 8 Ω
Monitor Cure ≥100 mA
Package Style TO18
Absolute Maximum Ratings
Reverse Voltage Vr 2.0 V
Operating Temperature To 10～30 ℃
Storage Temperature Tstg -40～85 ℃
1. High power laser diodes are high energy laser devices. It is harmful to human body and health. Never look directly into the laser output port.
2. High power laser diodes could operate in forward voltage. The reverse current and voltage should not be higher than 25µA and 3V, respectively.
3. Heavy humidity can get dew on the LD then damage the LD.
4. The generated heat must be removed in time when the LD working.
5. The high temperature will effect the performance of the products. The lifetime can also be shortened by high temperature.
6. The operating current and optical power of laser must not be higher than the given rate current and power. The excessive current would accelerate aging and shorten lifetime, even damage the LD.
7. The semiconductor laser diode is a sensitive electronic device. Please observe precaution for handling electrostatitic sensitive devices.
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