870nmの半導体レーザダイオードは高品質な製品である。870nmの半導体レーザダイオードは自由空間の光ファイバー通信
、ターゲットの指定、夜間視力と他の領域に応用されておる。780nm半導体レーザダイオードはTO18のパッケージと平面プリズムを採用します。
特徴
* 波長870nm
* 輸出出力 10mW
* 高品質
* 高效率
応用分野
* ターゲットの指定
* 自由空間の光ファイバー通信
* 夜間視力
870nm laser diode used TO18 packaged, output power 10mw, applied to target designation, free space optical communication applications and night vision and other fields.
Features:
* Center Wavelength: 870nm
* Output Power: 10mW
* Good beam quality
Applications:
* Optical Communication
* Target Designator
* Free-space Optical Communication
* Night Vision
Optical Specification
CW Output Power Po 10 mW
Center Wavelength λc 870±10 nm
Spectral Width Δλ ≤3.0 nm
Emitting Area 4×1 µm
Wavelength Temperature Coefficient 0.3 nm/℃
Beam Divergence θ⊥×θ∥ ≤40×10 deg
Polarization TE
Electrical Specification
Slope Efficiency Es ≥0.3 W/A
Threshold Current Ith ≤20 mA
Operating Current Io ≤45 mA
Operating Voltage Vf ≤2 V
Monitor Current ≥50 µA
Series Resistance Rd ≤15 Ω
Package Style TO18
Absolute Maximum Ratings
Reverse Voltage Vr 2.0 V
Operating Temperature To 10～30 ℃
Storage Temperature Tstg -40～85 ℃
1. High power laser diodes are high energy laser devices. It is harmful to human body and health. Never look directly into the laser output port.
2. High power laser diodes could operate in forward voltage. The reverse current and voltage should not be higher than 25µA and 3V, respectively.
3. Heavy humidity can get dew on the LD then damage the LD.
4. The generated heat must be removed in time when the LD working.
5. The high temperature will effect the performance of the products. The lifetime can also be shortened by high temperature.
6. The operating current and optical power of laser must not be higher than the given rate current and power. The excessive current would accelerate aging and shorten lifetime, even damage the LD.
7. The semiconductor laser diode is a sensitive electronic device. Please observe precaution for handling electrostatitic sensitive devices.
顧客評価: 0
